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Электронный каталог: Edmonds, L. D. - Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Me...
Edmonds, L. D. - Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Me...
Статья
Автор: Edmonds, L. D.
IEEE Transactions on Nuclear Science: Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Me...
б.г.
ISBN отсутствует
Автор: Edmonds, L. D.
IEEE Transactions on Nuclear Science: Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Me...
б.г.
ISBN отсутствует
Статья
Edmonds, L.D.
Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Memories / L.D.Edmonds, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.8, Pt.1. – p.2046-2053. – URL: https://doi.org/10.1109/TNS.2016.2641966. – Bibliogr.:14.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Edmonds, L.D.
Total Ionizing Dose Influence on the Single Event Effect Sensitivity in Samsung 8Gb NAND Flash Memories / L.D.Edmonds, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.8, Pt.1. – p.2046-2053. – URL: https://doi.org/10.1109/TNS.2016.2641966. – Bibliogr.:14.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$