Электронный каталог

Статья

Mu, Y.
Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements / Y.Mu, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.1, Pt.2. – p.673-682. – URL: https://doi.org/10.1109/TNS.2016.2633549. – Bibliogr.:46.



Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$