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Электронный каталог: Li, X. - Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations
Li, X. - Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations
Статья
Автор: Li, X.
IEEE Transactions on Nuclear Science: Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations
б.г.
ISBN отсутствует
Автор: Li, X.
IEEE Transactions on Nuclear Science: Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations
б.г.
ISBN отсутствует
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Статья
Li, X.
Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations / X.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.3. – p.976-982. – URL: https://doi.org/10.1109/TNS.2017.2657540. – Bibliogr.:26.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Li, X.
Characteristic of Displacement Defects in n-p-n Transistors Caused by Various Heavy Ion Irradiations / X.Li, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.3. – p.976-982. – URL: https://doi.org/10.1109/TNS.2017.2657540. – Bibliogr.:26.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
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