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Электронный каталог: Berthet, F. - Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors
Berthet, F. - Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors
Статья
Автор: Berthet, F.
IEEE Transactions on Nuclear Science: Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors
б.г.
ISBN отсутствует
Автор: Berthet, F.
IEEE Transactions on Nuclear Science: Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors
б.г.
ISBN отсутствует
Статья
Berthet, F.
Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors / F.Berthet, [et al.] // IEEE Transactions on Nuclear Science. – 2016. – Vol.63, No.3, Pt.3. – p.1918-1926. – URL: http://dx.doi.org/10.1109/TNS.2016.2566683. – Bibliogr.:21.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Berthet, F.
Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors / F.Berthet, [et al.] // IEEE Transactions on Nuclear Science. – 2016. – Vol.63, No.3, Pt.3. – p.1918-1926. – URL: http://dx.doi.org/10.1109/TNS.2016.2566683. – Bibliogr.:21.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$