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Электронный каталог: Nsengiyumva, P. - A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes
Nsengiyumva, P. - A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes
Статья
Автор: Nsengiyumva, P.
IEEE Transactions on Nuclear Science: A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes
б.г.
ISBN отсутствует
Автор: Nsengiyumva, P.
IEEE Transactions on Nuclear Science: A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes
б.г.
ISBN отсутствует
Статья
Nsengiyumva, P.
A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes / P.Nsengiyumva, [et al.] // IEEE Transactions on Nuclear Science. – 2016. – Vol.63, No.1, Pt.2. – p.266-274. – URL: http://dx.doi.org/10.1109/TNS.2015.2508981. – Bibliogr.:24.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Nsengiyumva, P.
A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes / P.Nsengiyumva, [et al.] // IEEE Transactions on Nuclear Science. – 2016. – Vol.63, No.1, Pt.2. – p.266-274. – URL: http://dx.doi.org/10.1109/TNS.2015.2508981. – Bibliogr.:24.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$