Электронный каталог

Статья

Lopez, J.G.
An Upgraded Drift–Diffusion Model for Evaluating the Carrier Lifetimes in Radiation-Damaged Semiconductor Detectors / J.G.Lopez, [et al.] // Nuclear Instruments & Methods in Physics Research B. – 2016. – Vol.371. – p.294-297. – URL: http://dx.doi.org/10.1016/j.nimb.2015.09.012. – Bibliogr.:14.



Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$