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Электронный каталог: Jianjun, C. - Characterization of Single-Event Transient Pulse Quenching Among Dummy Gate Isolated Logic Nodes ...
Jianjun, C. - Characterization of Single-Event Transient Pulse Quenching Among Dummy Gate Isolated Logic Nodes ...
Статья
Автор: Jianjun, C.
IEEE Transactions on Nuclear Science: Characterization of Single-Event Transient Pulse Quenching Among Dummy Gate Isolated Logic Nodes ...
б.г.
ISBN отсутствует
Автор: Jianjun, C.
IEEE Transactions on Nuclear Science: Characterization of Single-Event Transient Pulse Quenching Among Dummy Gate Isolated Logic Nodes ...
б.г.
ISBN отсутствует
Статья
Jianjun, C.
Characterization of Single-Event Transient Pulse Quenching Among Dummy Gate Isolated Logic Nodes in 65 nm Twin-Well and Triple-Well CMOS Technologies / C.Jianjun, [et al.] // IEEE Transactions on Nuclear Science. – 2015. – Vol.62, No.5, Pt.2. – p.2302-2309. – URL: http://dx.doi.org/10.1109/TNS.2015.2469740. – Bibliogr.:25.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Jianjun, C.
Characterization of Single-Event Transient Pulse Quenching Among Dummy Gate Isolated Logic Nodes in 65 nm Twin-Well and Triple-Well CMOS Technologies / C.Jianjun, [et al.] // IEEE Transactions on Nuclear Science. – 2015. – Vol.62, No.5, Pt.2. – p.2302-2309. – URL: http://dx.doi.org/10.1109/TNS.2015.2469740. – Bibliogr.:25.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$