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Электронный каталог: Bagatin, M. - Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories
Bagatin, M. - Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories
Статья
Автор: Bagatin, M.
IEEE Transactions on Nuclear Science: Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories
б.г.
ISBN отсутствует
Автор: Bagatin, M.
IEEE Transactions on Nuclear Science: Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories
б.г.
ISBN отсутствует
Статья
Bagatin, M.
Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories / M.Bagatin, [et al.] // IEEE Transactions on Nuclear Science. – 2014. – Vol.61, No.6, Pt.1. – p.2889-2895. – URL: http://dx.doi.org/10.1109/TNS.2014.2367813. – Bibliogr.:18.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Bagatin, M.
Sample-to-Sample Variability and Bit Errors Induced by Total Dose in Advanced NAND Flash Memories / M.Bagatin, [et al.] // IEEE Transactions on Nuclear Science. – 2014. – Vol.61, No.6, Pt.1. – p.2889-2895. – URL: http://dx.doi.org/10.1109/TNS.2014.2367813. – Bibliogr.:18.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$