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Электронный каталог: Zhang, Z. - Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and...
Zhang, Z. - Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and...
Статья
Автор: Zhang, Z.
IEEE Transactions on Nuclear Science: Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and...
б.г.
ISBN отсутствует
Автор: Zhang, Z.
IEEE Transactions on Nuclear Science: Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and...
б.г.
ISBN отсутствует
Статья
Zhang, Z.
Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies / Z.Zhang, [et al.] // IEEE Transactions on Nuclear Science. – 2014. – Vol.61,No.3, Pt.2. – p.1459-1467. – URL: http://dx.doi.org/10.1109/TNS.2014.2325063. – Bibliogr.:23.
Спец.(статьи,препринты) = С 344.3 - Ядерная электроника$
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Zhang, Z.
Investigation of Threshold Ion Range for Accurate Single Event Upset Measurements in Both SOI and Bulk Technologies / Z.Zhang, [et al.] // IEEE Transactions on Nuclear Science. – 2014. – Vol.61,No.3, Pt.2. – p.1459-1467. – URL: http://dx.doi.org/10.1109/TNS.2014.2325063. – Bibliogr.:23.
Спец.(статьи,препринты) = С 344.3 - Ядерная электроника$
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$