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Электронный каталог: Si, C. - First-Principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phon...
Si, C. - First-Principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phon...
Статья
Автор: Si, C.
Physical Review Letters: First-Principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phon...
б.г.
ISBN отсутствует
Автор: Si, C.
Physical Review Letters: First-Principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phon...
б.г.
ISBN отсутствует
Статья
Si, C.
First-Principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phonon Coupling in Graphene / C.Si, [et al.] // Physical Review Letters. – 2013. – Vol.111, No.19. – p.196802. – URL: http://dx.doi.org/10.1103/PhysRevLett.111.196802. – Bibliogr.:40.
Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры
Si, C.
First-Principles Calculations on the Effect of Doping and Biaxial Tensile Strain on Electron-Phonon Coupling in Graphene / C.Si, [et al.] // Physical Review Letters. – 2013. – Vol.111, No.19. – p.196802. – URL: http://dx.doi.org/10.1103/PhysRevLett.111.196802. – Bibliogr.:40.
Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры