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Электронный каталог: Zhang, Z.-T. - The Effect of Dephasing on Edge State Transport Through p-n Junctions in HgTe/CdTe Quantum Wells
Zhang, Z.-T. - The Effect of Dephasing on Edge State Transport Through p-n Junctions in HgTe/CdTe Quantum Wells
Статья
Автор: Zhang, Z.-T.
Journal of Physics: Condensed Matter: The Effect of Dephasing on Edge State Transport Through p-n Junctions in HgTe/CdTe Quantum Wells
б.г.
ISBN отсутствует
Автор: Zhang, Z.-T.
Journal of Physics: Condensed Matter: The Effect of Dephasing on Edge State Transport Through p-n Junctions in HgTe/CdTe Quantum Wells
б.г.
ISBN отсутствует
Статья
Zhang, Z.-T.
The Effect of Dephasing on Edge State Transport Through p-n Junctions in HgTe/CdTe Quantum Wells / Z.-T.Zhang, [et al.] // Journal of Physics: Condensed Matter. – 2014. – Vol.26, No.8. – p.085301. – URL: http://dx.doi.org/10.1088/0953-8984/26/8/085301. – Bibliogr.:33.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
Zhang, Z.-T.
The Effect of Dephasing on Edge State Transport Through p-n Junctions in HgTe/CdTe Quantum Wells / Z.-T.Zhang, [et al.] // Journal of Physics: Condensed Matter. – 2014. – Vol.26, No.8. – p.085301. – URL: http://dx.doi.org/10.1088/0953-8984/26/8/085301. – Bibliogr.:33.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$