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Электронный каталог: Sato, S.-I. - Electric Properties of Undoped Hydrogenated Amorphous Silicon Semiconductors Irradiated with Self...
Sato, S.-I. - Electric Properties of Undoped Hydrogenated Amorphous Silicon Semiconductors Irradiated with Self...
Статья
Автор: Sato, S.-I.
Nuclear Instruments & Methods in Physics Research B: Electric Properties of Undoped Hydrogenated Amorphous Silicon Semiconductors Irradiated with Self...
б.г.
ISBN отсутствует
Автор: Sato, S.-I.
Nuclear Instruments & Methods in Physics Research B: Electric Properties of Undoped Hydrogenated Amorphous Silicon Semiconductors Irradiated with Self...
б.г.
ISBN отсутствует
Статья
Sato, S.-I.
Electric Properties of Undoped Hydrogenated Amorphous Silicon Semiconductors Irradiated with Self-Ions / S.-I.Sato, [a.o.] // Nuclear Instruments & Methods in Physics Research B : Beam Interactins with Materials and Atoms. – 2012. – Vol.285. – p.107-111. – URL: http://dx.doi.org/10.1016/j.nimb.2012.05.010. – Bibliogr.:19.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Sato, S.-I.
Electric Properties of Undoped Hydrogenated Amorphous Silicon Semiconductors Irradiated with Self-Ions / S.-I.Sato, [a.o.] // Nuclear Instruments & Methods in Physics Research B : Beam Interactins with Materials and Atoms. – 2012. – Vol.285. – p.107-111. – URL: http://dx.doi.org/10.1016/j.nimb.2012.05.010. – Bibliogr.:19.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$