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Электронный каталог: Barak, J. - SEU Due to Electrons in Silicon Devices with Nanometric Sensitive Volumes and Small Critical Charge
Barak, J. - SEU Due to Electrons in Silicon Devices with Nanometric Sensitive Volumes and Small Critical Charge
Статья
Автор: Barak, J.
Nuclear Instruments & Methods in Physics Research B: SEU Due to Electrons in Silicon Devices with Nanometric Sensitive Volumes and Small Critical Charge
б.г.
ISBN отсутствует
Автор: Barak, J.
Nuclear Instruments & Methods in Physics Research B: SEU Due to Electrons in Silicon Devices with Nanometric Sensitive Volumes and Small Critical Charge
б.г.
ISBN отсутствует
Статья
Barak, J.
SEU Due to Electrons in Silicon Devices with Nanometric Sensitive Volumes and Small Critical Charge / J.Barak, [et al.] // Nuclear Instruments & Methods in Physics Research B : Beam Interactins with Materials and Atoms. – 2012. – Vol.287. – p.113-119. – URL: http://dx.doi.org/10.1016/j.nimb.2012.06.011. – Bibliogr.:31.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Barak, J.
SEU Due to Electrons in Silicon Devices with Nanometric Sensitive Volumes and Small Critical Charge / J.Barak, [et al.] // Nuclear Instruments & Methods in Physics Research B : Beam Interactins with Materials and Atoms. – 2012. – Vol.287. – p.113-119. – URL: http://dx.doi.org/10.1016/j.nimb.2012.06.011. – Bibliogr.:31.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$