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Электронный каталог: Poehlsen, T. - Charge Losses in Segmented Silicon Sensors at the Si-SiO&sub(2) Interface
Poehlsen, T. - Charge Losses in Segmented Silicon Sensors at the Si-SiO&sub(2) Interface
Статья
Автор: Poehlsen, T.
Nuclear Instruments & Methods in Physics Research A: Charge Losses in Segmented Silicon Sensors at the Si-SiO&sub(2) Interface
б.г.
ISBN отсутствует
Автор: Poehlsen, T.
Nuclear Instruments & Methods in Physics Research A: Charge Losses in Segmented Silicon Sensors at the Si-SiO&sub(2) Interface
б.г.
ISBN отсутствует
Статья
Poehlsen, T.
Charge Losses in Segmented Silicon Sensors at the Si-SiO&sub(2) Interface / T.Poehlsen, [et al.] // Nuclear Instruments & Methods in Physics Research A : Accelerators,spectrometers,detectors and associated equipment. – 2013. – Vol.700. – p.22-39. – URL: http://dx.doi.org/10.1016/j.nima.2012.10.063. – Bibliogr.:34.
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы
Poehlsen, T.
Charge Losses in Segmented Silicon Sensors at the Si-SiO&sub(2) Interface / T.Poehlsen, [et al.] // Nuclear Instruments & Methods in Physics Research A : Accelerators,spectrometers,detectors and associated equipment. – 2013. – Vol.700. – p.22-39. – URL: http://dx.doi.org/10.1016/j.nima.2012.10.063. – Bibliogr.:34.
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы