Электронный каталог -Wang, N.-P. - Effects of Defects Near Source or Drain Contacts of Carbon Nanotube Transistors- Absopac

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Автор: Wang, N.-P.
EPL: A Letters Journal Exploring the Frontiers of Physics: Effects of Defects Near Source or Drain Contacts of Carbon Nanotube Transistors
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Wang, N.-P.
Effects of Defects Near Source or Drain Contacts of Carbon Nanotube Transistors / N.-P.Wang, X.-J.Xu // EPL: A Letters Journal Exploring the Frontiers of Physics. – 2012. – Vol.100, No.4. – p.47009. – URL: http://dx.doi.org/10.1209/0295-5075/100/47009. – Bibliogr.:27.

Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры

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Электронный каталог: Wang, N.-P. - Effects of Defects Near Source or Drain Contacts of Carbon Nanotube Transistors

Wang, N.-P. - Effects of Defects Near Source or Drain Contacts of Carbon Nanotube Transistors

Электронный каталог

Поиск :

Личный кабинет :

Электронный каталог: Wang, N.-P. - Effects of Defects Near Source or Drain Contacts of Carbon Nanotube Transistors

Wang, N.-P. - Effects of Defects Near Source or Drain Contacts of Carbon Nanotube Transistors

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