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Электронный каталог: Singh, V. - Frequency Dependence Studies on the Interface Trap Density and Series Resistance of HfO&sub(2) Ga...
Singh, V. - Frequency Dependence Studies on the Interface Trap Density and Series Resistance of HfO&sub(2) Ga...
Статья
Автор: Singh, V.
Nuclear Instruments & Methods in Physics Research B: Frequency Dependence Studies on the Interface Trap Density and Series Resistance of HfO&sub(2) Ga...
б.г.
ISBN отсутствует
Автор: Singh, V.
Nuclear Instruments & Methods in Physics Research B: Frequency Dependence Studies on the Interface Trap Density and Series Resistance of HfO&sub(2) Ga...
б.г.
ISBN отсутствует
Статья
Singh, V.
Frequency Dependence Studies on the Interface Trap Density and Series Resistance of HfO&sub(2) Gate Dielectric Deposited on Si Substrate: Before and After 50 MeV Li*3*+ Ions Irradiation / V.Singh, [a.o.] // Nuclear Instruments & Methods in Physics Research B : Beam Interactins with Materials and Atoms. – 2011. – Vol.269, No.23. – p.2765-2770. – URL: http://dx.doi.org/10.1016/j.nimb.2011.08.025. – Bibliogr.:25.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Singh, V.
Frequency Dependence Studies on the Interface Trap Density and Series Resistance of HfO&sub(2) Gate Dielectric Deposited on Si Substrate: Before and After 50 MeV Li*3*+ Ions Irradiation / V.Singh, [a.o.] // Nuclear Instruments & Methods in Physics Research B : Beam Interactins with Materials and Atoms. – 2011. – Vol.269, No.23. – p.2765-2770. – URL: http://dx.doi.org/10.1016/j.nimb.2011.08.025. – Bibliogr.:25.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$