Поиск :
Личный кабинет :
Электронный каталог: Lefevre, J. - Characterization of a Silicon-Related Defect Detected by Its Excited Triplet State in Electron-Ir...
Lefevre, J. - Characterization of a Silicon-Related Defect Detected by Its Excited Triplet State in Electron-Ir...
Статья
Автор: Lefevre, J.
Physical Review B: Characterization of a Silicon-Related Defect Detected by Its Excited Triplet State in Electron-Ir...
б.г.
ISBN отсутствует
Автор: Lefevre, J.
Physical Review B: Characterization of a Silicon-Related Defect Detected by Its Excited Triplet State in Electron-Ir...
б.г.
ISBN отсутствует
Статья
Lefevre, J.
Characterization of a Silicon-Related Defect Detected by Its Excited Triplet State in Electron-Irradiated 3C-SiC / J.Lefevre, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2011. – Vol.83, No.7. – p.075201. – URL: http://dx.doi.org/10.1103/PhysRevB.83.075201. – Bibliogr.:48.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Lefevre, J.
Characterization of a Silicon-Related Defect Detected by Its Excited Triplet State in Electron-Irradiated 3C-SiC / J.Lefevre, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2011. – Vol.83, No.7. – p.075201. – URL: http://dx.doi.org/10.1103/PhysRevB.83.075201. – Bibliogr.:48.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$