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Электронный каталог: Iwamoto, N. - Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particl...
Iwamoto, N. - Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particl...
Статья
Автор: Iwamoto, N.
IEEE Transactions on Nuclear Science: Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particl...
б.г.
ISBN отсутствует
Автор: Iwamoto, N.
IEEE Transactions on Nuclear Science: Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particl...
б.г.
ISBN отсутствует
Статья
Iwamoto, N.
Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and its Contribution to the Increased Charge Collection / N.Iwamoto, [et al.] // IEEE Transactions on Nuclear Science. – 2011. – Vol.58,No.1, Pt.2. – p.305-313. – URL: http://dx.doi.org/10.1109/TNS.2010.2096432. – Bibliogr.:29.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Iwamoto, N.
Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and its Contribution to the Increased Charge Collection / N.Iwamoto, [et al.] // IEEE Transactions on Nuclear Science. – 2011. – Vol.58,No.1, Pt.2. – p.305-313. – URL: http://dx.doi.org/10.1109/TNS.2010.2096432. – Bibliogr.:29.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$