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Электронный каталог: Kim, M. C. - Enhancement of Nonvolatile-Memory Performance by Using Multiply-Stacked Ge Nanodots Prepared at R...
Kim, M. C. - Enhancement of Nonvolatile-Memory Performance by Using Multiply-Stacked Ge Nanodots Prepared at R...
Статья
Автор: Kim, M. C.
Journal of the Korean Physical Society: Enhancement of Nonvolatile-Memory Performance by Using Multiply-Stacked Ge Nanodots Prepared at R...
б.г.
ISBN отсутствует
Автор: Kim, M. C.
Journal of the Korean Physical Society: Enhancement of Nonvolatile-Memory Performance by Using Multiply-Stacked Ge Nanodots Prepared at R...
б.г.
ISBN отсутствует
Статья
Kim, M.C.
Enhancement of Nonvolatile-Memory Performance by Using Multiply-Stacked Ge Nanodots Prepared at Room Temperature / M.C.Kim, [a.o.] // Journal of the Korean Physical Society. – 2010. – Vol.57, No.4. – p.742-745. – URL: http://dx.doi.org/10.3938/jkps.57.742. – Bibliogr.:18.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
Kim, M.C.
Enhancement of Nonvolatile-Memory Performance by Using Multiply-Stacked Ge Nanodots Prepared at Room Temperature / M.C.Kim, [a.o.] // Journal of the Korean Physical Society. – 2010. – Vol.57, No.4. – p.742-745. – URL: http://dx.doi.org/10.3938/jkps.57.742. – Bibliogr.:18.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$