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Электронный каталог: Han, J. - Quantum Confinement, Core Level Shifts, and Dopant Segregation in P-Doped Si < 110 > Nanowires
Han, J. - Quantum Confinement, Core Level Shifts, and Dopant Segregation in P-Doped Si < 110 > Nanowires
Статья
Автор: Han, J.
Physical Review B: Quantum Confinement, Core Level Shifts, and Dopant Segregation in P-Doped Si < 110 > Nanowires
б.г.
ISBN отсутствует
Автор: Han, J.
Physical Review B: Quantum Confinement, Core Level Shifts, and Dopant Segregation in P-Doped Si < 110 > Nanowires
б.г.
ISBN отсутствует
Статья
Han, J.
Quantum Confinement, Core Level Shifts, and Dopant Segregation in P-Doped Si < 110 > Nanowires / J.Han, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2010. – Vol.82, No.15. – p.153413. – URL: http://dx.doi.org/10.1103/PhysRevB.82.153413. – Bibliogr.:27.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
Han, J.
Quantum Confinement, Core Level Shifts, and Dopant Segregation in P-Doped Si < 110 > Nanowires / J.Han, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2010. – Vol.82, No.15. – p.153413. – URL: http://dx.doi.org/10.1103/PhysRevB.82.153413. – Bibliogr.:27.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$