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Электронный каталог: Gartner, K. - MD Simulation of Ion Implantation Damage in AlGaAs: III. Defect Accumulation and Amorphization
Gartner, K. - MD Simulation of Ion Implantation Damage in AlGaAs: III. Defect Accumulation and Amorphization
Статья
Автор: Gartner, K.
Nuclear Instruments & Methods in Physics Research B: MD Simulation of Ion Implantation Damage in AlGaAs: III. Defect Accumulation and Amorphization
б.г.
ISBN отсутствует
Автор: Gartner, K.
Nuclear Instruments & Methods in Physics Research B: MD Simulation of Ion Implantation Damage in AlGaAs: III. Defect Accumulation and Amorphization
б.г.
ISBN отсутствует
Статья
Gartner, K.
MD Simulation of Ion Implantation Damage in AlGaAs: III. Defect Accumulation and Amorphization / K.Gartner // Nuclear Instruments & Methods in Physics Research B : Beam Interactins with Materials and Atoms. – 2010. – Vol.268, No.2. – p.155-164. – URL: http://dx.doi.org/10.1016/j.nimb.2009.09.022. – Bibliogr.:25.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Gartner, K.
MD Simulation of Ion Implantation Damage in AlGaAs: III. Defect Accumulation and Amorphization / K.Gartner // Nuclear Instruments & Methods in Physics Research B : Beam Interactins with Materials and Atoms. – 2010. – Vol.268, No.2. – p.155-164. – URL: http://dx.doi.org/10.1016/j.nimb.2009.09.022. – Bibliogr.:25.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$