Электронный каталог

Статья

Bellec, A.
Electronic Properties of the n-Doped Hydrogenated Silicon (100) Surface and Dehydrogenated Structures at 5 K / A.Bellec, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2009. – Vol.80, No.24. – p.245434. – URL: http://dx.doi.org/10.1103/PhysRevB.80.245434. – Bibliogr.:37.



Спец.(статьи,препринты) = С 393 - Физика низких температур