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Электронный каталог: Kim, I. Y. - Extending the Nanocluster-Si/Erbium Sensitization Distance in Er-Doped Silicon Nitride: The Role ...
Kim, I. Y. - Extending the Nanocluster-Si/Erbium Sensitization Distance in Er-Doped Silicon Nitride: The Role ...
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Статья
Автор: Kim, I. Y.
Applied Physics Letters: Extending the Nanocluster-Si/Erbium Sensitization Distance in Er-Doped Silicon Nitride: The Role ...
б.г.
ISBN отсутствует
Автор: Kim, I. Y.
Applied Physics Letters: Extending the Nanocluster-Si/Erbium Sensitization Distance in Er-Doped Silicon Nitride: The Role ...
б.г.
ISBN отсутствует
Статья
Kim, I.Y.
Extending the Nanocluster-Si/Erbium Sensitization Distance in Er-Doped Silicon Nitride: The Role of Er-Er Energy Migration / I.Y.Kim, [a.o.] // Applied Physics Letters. – 2009. – Vol.95, No.22. – p.221101. – URL: http://dx.doi.org/10.1063/1.3259723. – Bibliogr.:21.
Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры
Kim, I.Y.
Extending the Nanocluster-Si/Erbium Sensitization Distance in Er-Doped Silicon Nitride: The Role of Er-Er Energy Migration / I.Y.Kim, [a.o.] // Applied Physics Letters. – 2009. – Vol.95, No.22. – p.221101. – URL: http://dx.doi.org/10.1063/1.3259723. – Bibliogr.:21.
Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры