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Электронный каталог: Yossifon, G. - Rectification, Gating Voltage, and Interchannel Communication of Nanoslot Arrays Due to Asymmetri...
Yossifon, G. - Rectification, Gating Voltage, and Interchannel Communication of Nanoslot Arrays Due to Asymmetri...
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Статья
Автор: Yossifon, G.
Physical Review Letters: Rectification, Gating Voltage, and Interchannel Communication of Nanoslot Arrays Due to Asymmetri...
б.г.
ISBN отсутствует
Автор: Yossifon, G.
Physical Review Letters: Rectification, Gating Voltage, and Interchannel Communication of Nanoslot Arrays Due to Asymmetri...
б.г.
ISBN отсутствует
Статья
Yossifon, G.
Rectification, Gating Voltage, and Interchannel Communication of Nanoslot Arrays Due to Asymmetric Entrance Space Charge Polarization / G.Yossifon, [a.o.] // Physical Review Letters. – 2009. – Vol.103, No.15. – p.154502. – URL: http://dx.doi.org/10.1103/PhysRevLett.103.154502. – Bibliogr.:18.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
Yossifon, G.
Rectification, Gating Voltage, and Interchannel Communication of Nanoslot Arrays Due to Asymmetric Entrance Space Charge Polarization / G.Yossifon, [a.o.] // Physical Review Letters. – 2009. – Vol.103, No.15. – p.154502. – URL: http://dx.doi.org/10.1103/PhysRevLett.103.154502. – Bibliogr.:18.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$