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Электронный каталог: Andreev, S. V. - Spin Depolarization of Holes and Lineshape of the Hanle Effect in Semiconductor Nanostructures
Andreev, S. V. - Spin Depolarization of Holes and Lineshape of the Hanle Effect in Semiconductor Nanostructures
Статья
Автор: Andreev, S. V.
Physical Review B: Spin Depolarization of Holes and Lineshape of the Hanle Effect in Semiconductor Nanostructures
б.г.
ISBN отсутствует
Автор: Andreev, S. V.
Physical Review B: Spin Depolarization of Holes and Lineshape of the Hanle Effect in Semiconductor Nanostructures
б.г.
ISBN отсутствует
Статья
Andreev, S.V.
Spin Depolarization of Holes and Lineshape of the Hanle Effect in Semiconductor Nanostructures / S.V.Andreev, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2009. – Vol.80, No.11. – p.113301. – URL: http://dx.doi.org/10.1103/PhysRevB.80.113301. – Bibliogr.:22.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
Andreev, S.V.
Spin Depolarization of Holes and Lineshape of the Hanle Effect in Semiconductor Nanostructures / S.V.Andreev, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2009. – Vol.80, No.11. – p.113301. – URL: http://dx.doi.org/10.1103/PhysRevB.80.113301. – Bibliogr.:22.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$