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Электронный каталог: Hagele, D. - Towards Bose-Einstein Condensation of Semiconductor Excitons: The Biexciton Polarization Effect
Hagele, D. - Towards Bose-Einstein Condensation of Semiconductor Excitons: The Biexciton Polarization Effect
Статья
Автор: Hagele, D.
Physical Review Letters: Towards Bose-Einstein Condensation of Semiconductor Excitons: The Biexciton Polarization Effect
б.г.
ISBN отсутствует
Автор: Hagele, D.
Physical Review Letters: Towards Bose-Einstein Condensation of Semiconductor Excitons: The Biexciton Polarization Effect
б.г.
ISBN отсутствует
Статья
Hagele, D.
Towards Bose-Einstein Condensation of Semiconductor Excitons: The Biexciton Polarization Effect / D.Hagele, [et al.] // Physical Review Letters. – 2009. – Vol.103, No.14. – p.146402. – URL: http://dx.doi.org/10.1103/PhysRevLett.103.146402. – Bibliogr.:20.
Спец.(статьи,препринты) = С 326.2 - Бозе-системы. Сверхтекучесть
Hagele, D.
Towards Bose-Einstein Condensation of Semiconductor Excitons: The Biexciton Polarization Effect / D.Hagele, [et al.] // Physical Review Letters. – 2009. – Vol.103, No.14. – p.146402. – URL: http://dx.doi.org/10.1103/PhysRevLett.103.146402. – Bibliogr.:20.
Спец.(статьи,препринты) = С 326.2 - Бозе-системы. Сверхтекучесть