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Электронный каталог: De Napoli, M. - Dopant Concentration Dependence of the Response of SiC Schottky Diodes to Light Ions
De Napoli, M. - Dopant Concentration Dependence of the Response of SiC Schottky Diodes to Light Ions
Статья
Автор: De Napoli, M.
Nuclear Instruments & Methods in Physics Research A: Dopant Concentration Dependence of the Response of SiC Schottky Diodes to Light Ions
б.г.
ISBN отсутствует
Автор: De Napoli, M.
Nuclear Instruments & Methods in Physics Research A: Dopant Concentration Dependence of the Response of SiC Schottky Diodes to Light Ions
б.г.
ISBN отсутствует
Статья
De Napoli, M.
Dopant Concentration Dependence of the Response of SiC Schottky Diodes to Light Ions / M.De Napoli, [et al.] // Nuclear Instruments & Methods in Physics Research A : Accelerators,spectrometers,detectors and associated equipment. – 2009. – Vol.600, No.3. – p.618-623. – URL: http://dx.doi.org/10.1016/j.nima.2008.12.109. – Bibliogr.:32.
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы
De Napoli, M.
Dopant Concentration Dependence of the Response of SiC Schottky Diodes to Light Ions / M.De Napoli, [et al.] // Nuclear Instruments & Methods in Physics Research A : Accelerators,spectrometers,detectors and associated equipment. – 2009. – Vol.600, No.3. – p.618-623. – URL: http://dx.doi.org/10.1016/j.nima.2008.12.109. – Bibliogr.:32.
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы