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Электронный каталог: Xiang, H. J. - Strain Relaxation and Band-Gap Tunability in Ternary In&sub(x)Ga&sub(1-x)N Nanowires
Xiang, H. J. - Strain Relaxation and Band-Gap Tunability in Ternary In&sub(x)Ga&sub(1-x)N Nanowires
Статья
Автор: Xiang, H. J.
Physical Review B: Strain Relaxation and Band-Gap Tunability in Ternary In&sub(x)Ga&sub(1-x)N Nanowires
б.г.
ISBN отсутствует
Автор: Xiang, H. J.
Physical Review B: Strain Relaxation and Band-Gap Tunability in Ternary In&sub(x)Ga&sub(1-x)N Nanowires
б.г.
ISBN отсутствует
Статья
Xiang, H.J.
Strain Relaxation and Band-Gap Tunability in Ternary In&sub(x)Ga&sub(1-x)N Nanowires / H.J.Xiang, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2008. – Vol.78, No.19. – p.193301. – URL: http://dx.doi.org/10.1103/PhysRevB.78.193301. – Bibliogr.:30.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
Xiang, H.J.
Strain Relaxation and Band-Gap Tunability in Ternary In&sub(x)Ga&sub(1-x)N Nanowires / H.J.Xiang, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2008. – Vol.78, No.19. – p.193301. – URL: http://dx.doi.org/10.1103/PhysRevB.78.193301. – Bibliogr.:30.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$