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Электронный каталог: Jaderstrom, H. - 200 and 300 MeV/nucleon Nuclear Reactions Responsible for Single-Event Effects in Microelectronics
Jaderstrom, H. - 200 and 300 MeV/nucleon Nuclear Reactions Responsible for Single-Event Effects in Microelectronics
Статья
Автор: Jaderstrom, H.
Physical Review C: 200 and 300 MeV/nucleon Nuclear Reactions Responsible for Single-Event Effects in Microelectronics
б.г.
ISBN отсутствует
Автор: Jaderstrom, H.
Physical Review C: 200 and 300 MeV/nucleon Nuclear Reactions Responsible for Single-Event Effects in Microelectronics
б.г.
ISBN отсутствует
Статья
Jaderstrom, H.
200 and 300 MeV/nucleon Nuclear Reactions Responsible for Single-Event Effects in Microelectronics / H.Jaderstrom, Yu.Murin, P.Nomokonov, [et al.] // Physical Review C : Nuclear Physics. – 2008. – Vol.77, No.4. – p.044601. – URL: http://dx.doi.org/10.1103/PhysRevC.77.044601. – Bibliogr.:50.
Спец.(статьи,препринты) = С 343 е1 - Взаимодействие тяжелых ионов с ядрами
ОИЯИ = ОИЯИ (JINR)2008
Jaderstrom, H.
200 and 300 MeV/nucleon Nuclear Reactions Responsible for Single-Event Effects in Microelectronics / H.Jaderstrom, Yu.Murin, P.Nomokonov, [et al.] // Physical Review C : Nuclear Physics. – 2008. – Vol.77, No.4. – p.044601. – URL: http://dx.doi.org/10.1103/PhysRevC.77.044601. – Bibliogr.:50.
Спец.(статьи,препринты) = С 343 е1 - Взаимодействие тяжелых ионов с ядрами
ОИЯИ = ОИЯИ (JINR)2008