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Электронный каталог: Qian, C. - Research on Total-Dose Hardening for H-Gate PD NMOSFET/SIMOX by Ion Implanting into Buried Oxide
Qian, C. - Research on Total-Dose Hardening for H-Gate PD NMOSFET/SIMOX by Ion Implanting into Buried Oxide
Статья
Автор: Qian, C.
Chinese Physics C: Research on Total-Dose Hardening for H-Gate PD NMOSFET/SIMOX by Ion Implanting into Buried Oxide
б.г.
ISBN отсутствует
Автор: Qian, C.
Chinese Physics C: Research on Total-Dose Hardening for H-Gate PD NMOSFET/SIMOX by Ion Implanting into Buried Oxide
б.г.
ISBN отсутствует
Статья
Qian, C.
Research on Total-Dose Hardening for H-Gate PD NMOSFET/SIMOX by Ion Implanting into Buried Oxide / C.Qian, [a.o.] // Chinese Physics C. – 2008. – Vol.32, No.2. – p.130-134. – URL: http://hepnp.ihep.ac.cn/qikan/epaper/zhaiyao.asp?bsid=6895. – Bibliogr.:13.
Спец.(статьи,препринты) = Ц 73 - Радиоаппаратура и радиодетали
Qian, C.
Research on Total-Dose Hardening for H-Gate PD NMOSFET/SIMOX by Ion Implanting into Buried Oxide / C.Qian, [a.o.] // Chinese Physics C. – 2008. – Vol.32, No.2. – p.130-134. – URL: http://hepnp.ihep.ac.cn/qikan/epaper/zhaiyao.asp?bsid=6895. – Bibliogr.:13.
Спец.(статьи,препринты) = Ц 73 - Радиоаппаратура и радиодетали