Электронный каталог

Статья

Krasavin, S.E.
Gate-Modulated Resistance as a Probe of Graphene Channel Internal Structure / S.E.Krasavin, A.A.Donkov, V.A.Osipov. – Text : electronic // Solid State Communications. – 2026. – Vol. 414. – P. 116457. – URL: https://doi.org/10.1016/j.ssc.2026.116457. – Bibliogr.: 31.

We demonstrate that the gate-modulated channel resistance in graphene field-effect transistors (GFETs) provides critical insights into the polycrystalline structure of graphene and the nature of adsorbed impurities. By applying the proposed theoretical model to experimental data, we show that for devices with Ni contacts, the resistance behavior is consistent with the presence of low-concentration donor-type impurities featuring shallow resonance levels (e.g., hydrogen). In contrast, data for Ti-contact samples can be accurately fitted only by assuming the additional presence of another impurity type with deep-lying resonant levels. Given the high sensitivity of the channel resistance to the type and concentration of resonant impurities, it is necessary to take into account the specifics of the internal structure of the graphene channel in the production of GFET-based sensor devices.



Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры