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Электронный каталог: Luu, T. A. - Ion Implantation-Driven Defect Engineering in BiVO&sub(4) Thin Films for Catalytic Applications
Luu, T. A. - Ion Implantation-Driven Defect Engineering in BiVO&sub(4) Thin Films for Catalytic Applications
Статья
Автор: Luu, T. A.
Ceramics International: Ion Implantation-Driven Defect Engineering in BiVO&sub(4) Thin Films for Catalytic Applications
б.г.
ISBN отсутствует
Автор: Luu, T. A.
Ceramics International: Ion Implantation-Driven Defect Engineering in BiVO&sub(4) Thin Films for Catalytic Applications
б.г.
ISBN отсутствует
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Статья
Luu, T.A.
Ion Implantation-Driven Defect Engineering in BiVO&sub(4) Thin Films for Catalytic Applications / T.A.Luu, N.V.M.Trung, N.V.Tiep, A.A.Sidorin, A.A.Donkov, O.S.Orlov, S.V.Mitrofanov, N.Kirilkin, A.S.Abiyev, P.L.Tuan, T.Vershinina, E.P.Popov, S.F.Samadov, M.N.Mirzayev, [a.o.]. – Text : electronic // Ceramics International. – 2026. – Vol. 51, No. 9, Pt. B. – P. 12572-12588. – URL: https://doi.org/10.1016/j.ceramint.2026.01.403. – Bibliogr.: 73.
Designing and controlling structural defects in semiconductor photocatalysts using ion implantation remains a challenging issue. This work explores the evolution of point and complex defects in 100 keV P&sup(+)-implanted BiVO&sub(4) thin films using slow-positron beam (SPB) measurements combined with theoretical calculations. Variableenergy (0.1–14 keV) Doppler broadening (VEDB) and electron momentum distribution (VEEMD) analyses, together with two-component density functional theory (TC-DFT) calculations, are employed to characterize defect evolution. Complementary techniques, including SRIM simulations, Rutherford backscattering spectrometry (RBS), high-resolution transmission electron microscopy (HR-TEM), energy-dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman spectroscopy, are used to further assess the defective structures. The results indicate that a competitive formation of point defects occurs in P&sup(+)-implanted BiVO&sub(4) thin films, including oxygen, bismuth, and vanadium vacancies (V&sub(O), V&sub(Bi), and V&sub(V)), oxygen substitution by phosphorus (P&sub(O)), along with more complex defects such as V&sub(Bi) + P&sub(O) and V&sub(V) + P&sub(O). The evolution of those defects proceeds differently across different depth regions (0–30, 30–117, and 117–225 nm) and at different implanted fluences (10&sup(13)–10&sup(15) ions.cm&su− 2 ) in the BiVO&sub(4) thin film. Comprehensive analyses using SPB,
Спец.(статьи,препринты) = С 344.4б - Методы приготовления тонких пленок$
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2026
Luu, T.A.
Ion Implantation-Driven Defect Engineering in BiVO&sub(4) Thin Films for Catalytic Applications / T.A.Luu, N.V.M.Trung, N.V.Tiep, A.A.Sidorin, A.A.Donkov, O.S.Orlov, S.V.Mitrofanov, N.Kirilkin, A.S.Abiyev, P.L.Tuan, T.Vershinina, E.P.Popov, S.F.Samadov, M.N.Mirzayev, [a.o.]. – Text : electronic // Ceramics International. – 2026. – Vol. 51, No. 9, Pt. B. – P. 12572-12588. – URL: https://doi.org/10.1016/j.ceramint.2026.01.403. – Bibliogr.: 73.
Designing and controlling structural defects in semiconductor photocatalysts using ion implantation remains a challenging issue. This work explores the evolution of point and complex defects in 100 keV P&sup(+)-implanted BiVO&sub(4) thin films using slow-positron beam (SPB) measurements combined with theoretical calculations. Variableenergy (0.1–14 keV) Doppler broadening (VEDB) and electron momentum distribution (VEEMD) analyses, together with two-component density functional theory (TC-DFT) calculations, are employed to characterize defect evolution. Complementary techniques, including SRIM simulations, Rutherford backscattering spectrometry (RBS), high-resolution transmission electron microscopy (HR-TEM), energy-dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), X-ray diffraction (XRD), and Raman spectroscopy, are used to further assess the defective structures. The results indicate that a competitive formation of point defects occurs in P&sup(+)-implanted BiVO&sub(4) thin films, including oxygen, bismuth, and vanadium vacancies (V&sub(O), V&sub(Bi), and V&sub(V)), oxygen substitution by phosphorus (P&sub(O)), along with more complex defects such as V&sub(Bi) + P&sub(O) and V&sub(V) + P&sub(O). The evolution of those defects proceeds differently across different depth regions (0–30, 30–117, and 117–225 nm) and at different implanted fluences (10&sup(13)–10&sup(15) ions.cm&su− 2 ) in the BiVO&sub(4) thin film. Comprehensive analyses using SPB,
Спец.(статьи,препринты) = С 344.4б - Методы приготовления тонких пленок$
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2026
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