Электронный каталог

Статья

Abdullayev, A.P.
Defect and Crystal Structure Variation in Tl-Doped TlGaTe&sub(2) Semiconductor Alloys: An Experimental and Theoretical Study / A.P.Abdullayev, S.F.Samadov, A.S.Abiyev, A.A.Sidorin, N.V.M.Trung, O.S.Orlov, [a.o.]. – Text : electronic // Journal of Alloys and Compounds. – 2025. – Vol. 1038. – P. 182773. – URL: https://doi.org/10.1016/j.jallcom.2025.182773. – Bibliogr.: 69.

In this work, the structural and defect characteristics of TlGaTe&sub(2) semiconductors doped with 5 % and 9 % thallium (Tl) were investigated using X-ray diffraction (XRD), positron annihilation lifetime spectroscopy (PALS), Doppler broadening spectroscopy (DBS), and first-principles calculations. XRD analysis confirmed the preservation of the tetragonal I4/mcm symmetry across all compositions, with increasing Tl content inducing local microstrain without long-range structural transitions. PALS revealed a dual defect evolution mechanism: sequential filling of micropores by Tl atoms alongside the creation of monovacancies (primarily monoGa). This was supported by the non-monotonic behavior of positron lifetime components and the ortho-positronium annihilation ratio. Electron Momentum Distribution (EMD) analysis further corroborated this, indicating Tl substitution for Ga and a modified bonding environment due to Tl occupying micropores. DBS showed a transition to a more homogeneous defect distribution with increased Tl concentration. These findings provide a detailed understanding of the complex defect dynamics induced by Tl doping in TlGaTe&sub(2), offering potential for defect engineering to tailor its properties for advanced technological applications.



Спец.(статьи,препринты) = С 332.8 - Синхротронное излучение. Лазеры на свободных электронах. Получение и использование рентгеновских лучей
Спец.(статьи,препринты) = С 350 - Приложения методов ядерной физики в смежных областях
ОИЯИ = ОИЯИ (JINR)2025