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Электронный каталог: Dementev, D. - In-Beam Tests of Double-Sided Silicon Strip Detector Modules for the BM@N Experiment
Dementev, D. - In-Beam Tests of Double-Sided Silicon Strip Detector Modules for the BM@N Experiment
Статья
Автор: Dementev, D.
Nuclear Instruments & Methods in Physics Research A: In-Beam Tests of Double-Sided Silicon Strip Detector Modules for the BM@N Experiment
б.г.
ISBN отсутствует
Автор: Dementev, D.
Nuclear Instruments & Methods in Physics Research A: In-Beam Tests of Double-Sided Silicon Strip Detector Modules for the BM@N Experiment
б.г.
ISBN отсутствует
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Статья
Dementev, D.
In-Beam Tests of Double-Sided Silicon Strip Detector Modules for the BM@N Experiment / D.Dementev, R.A.Diaz, C.Ceballos Sanchez, A.Kolozhvari, V.Leontyev, N.Maltsev, Yu.Murin, A.R.Alvarez, I.Rufanov, A.Sheremetev, M.Shitenkov, V.Zherebchevsky. – Text : electronic // Nuclear Instruments & Methods in Physics Research A. – 2025. – Vol. 1075. – P. 170390. – URL: https://doi.org/10.1016/j.nima.2025.170390. – Bbibliogr.: 22.
The results of the in-beam tests of the final version of the DSSD modules for the Silicon Tracking System of BM@N experiment at JINR NICA facility are presented. Each module consists of a double-sided microstrip silicon sensor and front-end electronics connected to each other via low-mass aluminum microcables. Investigations of the module characteristics and tests of the readout electronics were done at proton synchrocyclotron SC-1000 in Petersburg Nuclear Physics Institute. Signal-to-noise ratio, spatial resolution and detection efficiency were measured. Performance of the areas with strips with a second metallization layer and strips with bonding failures was studied. Dependencies of the main operation parameters of the modules on the bias voltage and ADC threshold were also obtained. The average registration efficiency of the modules resulted in values higher than 99% with signal-to-noise ratio typical values for both sides of the sensor not less than 21 and a spatial resolution of 15/4 *mm
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы
ОИЯИ = ОИЯИ (JINR)2025
Бюллетени = 30/025
Dementev, D.
In-Beam Tests of Double-Sided Silicon Strip Detector Modules for the BM@N Experiment / D.Dementev, R.A.Diaz, C.Ceballos Sanchez, A.Kolozhvari, V.Leontyev, N.Maltsev, Yu.Murin, A.R.Alvarez, I.Rufanov, A.Sheremetev, M.Shitenkov, V.Zherebchevsky. – Text : electronic // Nuclear Instruments & Methods in Physics Research A. – 2025. – Vol. 1075. – P. 170390. – URL: https://doi.org/10.1016/j.nima.2025.170390. – Bbibliogr.: 22.
The results of the in-beam tests of the final version of the DSSD modules for the Silicon Tracking System of BM@N experiment at JINR NICA facility are presented. Each module consists of a double-sided microstrip silicon sensor and front-end electronics connected to each other via low-mass aluminum microcables. Investigations of the module characteristics and tests of the readout electronics were done at proton synchrocyclotron SC-1000 in Petersburg Nuclear Physics Institute. Signal-to-noise ratio, spatial resolution and detection efficiency were measured. Performance of the areas with strips with a second metallization layer and strips with bonding failures was studied. Dependencies of the main operation parameters of the modules on the bias voltage and ADC threshold were also obtained. The average registration efficiency of the modules resulted in values higher than 99% with signal-to-noise ratio typical values for both sides of the sensor not less than 21 and a spatial resolution of 15/4 *mm
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы
ОИЯИ = ОИЯИ (JINR)2025
Бюллетени = 30/025
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