Электронный каталог

Статья

Mabelane, T.S.
Effect of Exposing Se Pre-Implanted Polycrystalline SiC to Maximum Electronic Energy Loss of 33.7 keV/nm and Annealing / T.S.Mabelane, V.A.Skuratov, [a.o.]. – Text : electronic // Surfaces and Interfaces. – 2025. – Vol. 64. – P. 106376. – URL: https://doi.org/10.1016/j.surfin.2025.106376. – Bibliogr.: 29.

In this work the effect of swift heavy ions (SHIs) (710 MeV Bi&sup(51+)) irradiation and annealing on selenium (Se) pre-implanted silicon carbide (SiC) was investigated. SiC samples were implanted individually with 200 keV Se ions to a fluence of 1 × 10&sup(16) cm&sup(−2) at both room temperature (RT) and 350&sup(o)C. Following this, some pre-implanted samples were irradiated at RT with 710 MeV Bi&sup(51+) ions to a fluence of 1 × 10*1*3 cm&sup(−2). These irradiated samples then underwent sequential annealing at temperatures ranging from 1000 to 1200&sup(o)C, in 100&sup(o)C increments, for 10 h. The samples were characterized using Raman, SEM, TEM, and RBS. Sequential annealing of the RT pre-implanted and then irradiated sample up to 1200&sup(o)C led to recrystallization of the highly defective SiC layer into strained nano-crystalline SiC with cavities, accompanied by the formation of Se precipitates. In contrast, sequential annealing of the 350 &sup(o)C pre-implanted and then irradiated sample up to 1200&sup(o)C also caused recrystallization of the defective SiC layer into nano-crystalline SiC, but with minor strained regions. No loss or migration of Se was detected in either the RT or 350&sup(o)C pre-implanted samples following SHIs irradiation and annealing up to 1200&sup(o)C.



Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2025
Бюллетени = 25/025