Электронный каталог

Статья

Scandale, W.
Multiple Scattering of Positively Charged Particles Moving near the (111) Plane in a Silicon Single Crystal / W.Scandale, A.M.Taratin, [a.o.] // The European Physical Journal Plus [Electronic resource]. – 2024. – Vol. 139, No. 11. – P. 1041. – URL: https://doi.org/10.1140/epjp/s13360-024-05851-3. – Bibliogr.: 15.

The article is devoted to the study of the suppression of multiple scattering of positively charged particles with momenta of 180 GeV/c and 400 GeV/c passing through bent single crystals of silicon at small angles to the plane (111) both in channeling mode and in the above-barrier state. For the first time, the suppression of the effect of multiple scattering of non-channeling particles passing at a small angle to one of the planes of a silicon single crystal was observed. In addition, the asymmetry was observed in the multiple scattering of over-barrier particles with respect to their zero angle of entry into the single crystal.



ОИЯИ = ОИЯИ (JINR)2024
Спец.(статьи,препринты) = С 342 б2 - Прохождение заряженных частиц через кристаллы: каналирование, стринг-эффект, эффект "теней". Сверхтонкое взаимодействие для ядерных систем
Бюллетени = 4/025