Электронный каталог

Статья

Guan, Y.
Study of Silicon Photomultiplier External Cross-Talk / Y.Guan, N.Anfimov, D.Fedoseev, K.Kuznetsova, A.Rybnikov, A.Selyunin, A.Sotnikov, [a.o.] // Journal of Instrumentation [Electronic resource]. – 2024. – Vol. 19, No. 6. – P. P06024. – URL: https://doi.org/10.1088/1748-0221/19/06/P06024.

Optical cross-talk is a critical characteristic of Silicon Photomultipliers (SiPMs) and represents a significant source of the excess noise factor, exerting a substantial influence on detector performance. During the avalanche process of SiPMs, photons generated can give rise to both internal cross-talk within the same SiPM and external cross-talk when photons escape from one SiPM and trigger avalanches in others. In scenarios where SiPMs are arranged in a compact configuration and positioned facing each other, the external cross-talk could even dominate the cross-talk phenomenon. This paper investigates two distinct methods for measuring external cross-talk: the counting method, which involves operating SiPMs face-to-face and measuring their coincident signals, and the reflection method, which employs a highly reflective film attached to the surface of the SiPMs. External cross-talk measurements have been conducted on several types of SiPMs, including Vacuum Ultra-Violet (VUV) sensitive SiPMs that Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics Inc (HPK) produced for nEXO as well as visible-sensitive SiPMs provided by FBK, HPK and SensL Technologies Ltd (SenSL) for JUNO-TAO. The results reveal a significant presence of external cross-talk in all tested SiPMs, with HPK's SiPMs exhibiting a dominant external cross-talk component due to the implementation of optical trenches that effectively suppress internal cross-talk. Furthermore, we found that the number of fired SPADs resulting from internal cross-talk can be described by combining Geometric and Borel models for all tested SiPMs, while the external cross-talk can be predicted using a pure Borel model. These distinct probability distributions lead to different excess noise factors, thereby impacting the detector performance in varying ways.



ОИЯИ = ОИЯИ (JINR)2024
Спец.(статьи,препринты) = С 344.1м - Полупроводниковые детекторы
Бюллетени = 32/024