Поиск :
Личный кабинет :
Электронный каталог: Ibrayeva, A. - The Effect of Aluminium Concentration on the Resistance of Si&sub(3)N&sub(4) to Ion Track Formation
Ibrayeva, A. - The Effect of Aluminium Concentration on the Resistance of Si&sub(3)N&sub(4) to Ion Track Formation
Статья
Автор: Ibrayeva, A.
Vacuum [Electronic resource]: The Effect of Aluminium Concentration on the Resistance of Si&sub(3)N&sub(4) to Ion Track Formation
б.г.
ISBN отсутствует
Автор: Ibrayeva, A.
Vacuum [Electronic resource]: The Effect of Aluminium Concentration on the Resistance of Si&sub(3)N&sub(4) to Ion Track Formation
б.г.
ISBN отсутствует
На полку
Статья
Ibrayeva, A.
The Effect of Aluminium Concentration on the Resistance of Si&sub(3)N&sub(4) to Ion Track Formation / A.Ibrayeva, J.O'Connell, V.Skuratov, A.J.Van Vuuren // Vacuum [Electronic resource]. – 2024. – Vol. 220. – P. 112865. – URL: https://doi.org/10.1016/j.vacuum.2023.112865. – Bibliogr.: 28.
The role of Al impurities on the structural response of polycrystalline silicon nitride to swift Xe and Bi ions at single ion track and overlapped ion track fluences is investigated. Si&sub(3)N&sub(4) with Al impurity concentrations of 3 at.%, 1 at.% and 0.1. at.% were examined by means of high resolution scanning transmission electron microscopy. The threshold electronic energy loss (S&sub(et)) required to form amorphous tracks was found to decrease with increasing Al fraction from above 33 keV/nm (0.1 at.% Al) to below 22 keV/nm for specimens containing about 3 at.% Al. All specimens were partially amorphized at overlapping ion fluence and the amorphous fraction monotonically increased with increasing Al content at the same ion fluence.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2024
Бюллетени = 17/024
Ibrayeva, A.
The Effect of Aluminium Concentration on the Resistance of Si&sub(3)N&sub(4) to Ion Track Formation / A.Ibrayeva, J.O'Connell, V.Skuratov, A.J.Van Vuuren // Vacuum [Electronic resource]. – 2024. – Vol. 220. – P. 112865. – URL: https://doi.org/10.1016/j.vacuum.2023.112865. – Bibliogr.: 28.
The role of Al impurities on the structural response of polycrystalline silicon nitride to swift Xe and Bi ions at single ion track and overlapped ion track fluences is investigated. Si&sub(3)N&sub(4) with Al impurity concentrations of 3 at.%, 1 at.% and 0.1. at.% were examined by means of high resolution scanning transmission electron microscopy. The threshold electronic energy loss (S&sub(et)) required to form amorphous tracks was found to decrease with increasing Al fraction from above 33 keV/nm (0.1 at.% Al) to below 22 keV/nm for specimens containing about 3 at.% Al. All specimens were partially amorphized at overlapping ion fluence and the amorphous fraction monotonically increased with increasing Al content at the same ion fluence.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
ОИЯИ = ОИЯИ (JINR)2024
Бюллетени = 17/024
