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Электронный каталог: Su, Z. - Reliability Improvement on SRAM Physical Unclonable Function (PUF) Using an 8T Cell in 28 nm FDSOI
Su, Z. - Reliability Improvement on SRAM Physical Unclonable Function (PUF) Using an 8T Cell in 28 nm FDSOI
Статья
Автор: Su, Z.
IEEE Transactions on Nuclear Science: Reliability Improvement on SRAM Physical Unclonable Function (PUF) Using an 8T Cell in 28 nm FDSOI
б.г.
ISBN отсутствует
Автор: Su, Z.
IEEE Transactions on Nuclear Science: Reliability Improvement on SRAM Physical Unclonable Function (PUF) Using an 8T Cell in 28 nm FDSOI
б.г.
ISBN отсутствует
Статья
Su, Z.
Reliability Improvement on SRAM Physical Unclonable Function (PUF) Using an 8T Cell in 28 nm FDSOI / Z.Su, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.3, Pt.1. – P.333-339. – URL: https://doi.org/10.1109/TNS.2021.3126587. – Bibliogr.:27.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Su, Z.
Reliability Improvement on SRAM Physical Unclonable Function (PUF) Using an 8T Cell in 28 nm FDSOI / Z.Su, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.3, Pt.1. – P.333-339. – URL: https://doi.org/10.1109/TNS.2021.3126587. – Bibliogr.:27.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$