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Электронный каталог: Ma, T. - Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahi...
Ma, T. - Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahi...
Статья
Автор: Ma, T.
IEEE Transactions on Nuclear Science: Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahi...
б.г.
ISBN отсутствует
Автор: Ma, T.
IEEE Transactions on Nuclear Science: Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahi...
б.г.
ISBN отсутствует
Статья
Ma, T.
Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses / T.Ma, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.3, Pt.1. – P.307-313. – URL: https://doi.org/10.1109/TNS.2021.3125769. – Bibliogr.:28.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Ma, T.
Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses / T.Ma, [et al.] // IEEE Transactions on Nuclear Science. – 2022. – Vol.69, No.3, Pt.1. – P.307-313. – URL: https://doi.org/10.1109/TNS.2021.3125769. – Bibliogr.:28.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$