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Электронный каталог: Zat'ko, B. - Electrical Properties of Detector Schottky Diodes Based on 4H-SiC High Quality Epitaxial Layer
Zat'ko, B. - Electrical Properties of Detector Schottky Diodes Based on 4H-SiC High Quality Epitaxial Layer
Книга (аналит. описание)
Автор: Zat'ko, B.
Applied Physics of Condensed Matter (APCOM 2019), Strbske Pleso, Slovak Republic, 19–21 June 2019 [Electronic resource]: Electrical Properties of Detector Schottky Diodes Based on 4H-SiC High Quality Epitaxial Layer
б.г.
ISBN отсутствует
Автор: Zat'ko, B.
Applied Physics of Condensed Matter (APCOM 2019), Strbske Pleso, Slovak Republic, 19–21 June 2019 [Electronic resource]: Electrical Properties of Detector Schottky Diodes Based on 4H-SiC High Quality Epitaxial Layer
б.г.
ISBN отсутствует
Книга (аналит. описание)
Zat'ko, B.
Electrical Properties of Detector Schottky Diodes Based on 4H-SiC High Quality Epitaxial Layer / B.Zat'ko, L.Hrubcin, [a.o.] // Applied Physics of Condensed Matter (APCOM 2019), Strbske Pleso, Slovak Republic, 19–21 June 2019 [Electronic resource] / Ed.: J.Sitek, J.Vajda, I.Jamnicky. – Melville; New York : AIP, 2019. – p.020054. – URL: http://dx.doi.org/10.1063/1.5119507. – Bibliogr.:12. – (AIP Conference Proceedings ; Vol.2131) .
Спец.(статьи,препринты) = С 344.1у - Диэлектрические детекторы. Детекторы осколков деления
ОИЯИ = ОИЯИ (JINR)2019
Zat'ko, B.
Electrical Properties of Detector Schottky Diodes Based on 4H-SiC High Quality Epitaxial Layer / B.Zat'ko, L.Hrubcin, [a.o.] // Applied Physics of Condensed Matter (APCOM 2019), Strbske Pleso, Slovak Republic, 19–21 June 2019 [Electronic resource] / Ed.: J.Sitek, J.Vajda, I.Jamnicky. – Melville; New York : AIP, 2019. – p.020054. – URL: http://dx.doi.org/10.1063/1.5119507. – Bibliogr.:12. – (AIP Conference Proceedings ; Vol.2131) .
Спец.(статьи,препринты) = С 344.1у - Диэлектрические детекторы. Детекторы осколков деления
ОИЯИ = ОИЯИ (JINR)2019