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Электронный каталог: Peng, L. - Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress
Peng, L. - Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress
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Статья
Автор: Peng, L.
IEEE Transactions on Nuclear Science: Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress
б.г.
ISBN отсутствует
Автор: Peng, L.
IEEE Transactions on Nuclear Science: Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress
б.г.
ISBN отсутствует
Статья
Peng, L.
Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress / L.Peng, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.10. – p.2633-2638. – URL: https://doi.org/10.1109/TNS.2017.2744679. – Bibliogr.:28.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$
Peng, L.
Analysis on the Rapid Recovery of Irradiated VDMOSFETs by the Positive High Electric Field Stress / L.Peng, [et al.] // IEEE Transactions on Nuclear Science. – 2017. – Vol.64, No.10. – p.2633-2638. – URL: https://doi.org/10.1109/TNS.2017.2744679. – Bibliogr.:28.
Спец.(статьи,препринты) = С 349.1 - Действие излучения на материалы$