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Электронный каталог: Hoff, J. R. - Cryogenic Lifetime Studies of 130 nm and 65 nm nMOS Transistors for High-Energy Physics Experiments
Hoff, J. R. - Cryogenic Lifetime Studies of 130 nm and 65 nm nMOS Transistors for High-Energy Physics Experiments
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Статья
Автор: Hoff, J. R.
IEEE Transactions on Nuclear Science: Cryogenic Lifetime Studies of 130 nm and 65 nm nMOS Transistors for High-Energy Physics Experiments
б.г.
ISBN отсутствует
Автор: Hoff, J. R.
IEEE Transactions on Nuclear Science: Cryogenic Lifetime Studies of 130 nm and 65 nm nMOS Transistors for High-Energy Physics Experiments
б.г.
ISBN отсутствует
Статья
Hoff, J.R.
Cryogenic Lifetime Studies of 130 nm and 65 nm nMOS Transistors for High-Energy Physics Experiments / J.R.Hoff, [a.o.] // IEEE Transactions on Nuclear Science. – 2015. – Vol.62, No.3, Pt.3. – p.1255-61. – URL: http://dx.doi.org/10.1109/TNS.2015.2433793. – Bibliogr.:24.
Спец.(статьи,препринты) = С 344.1х - Методы регистрации нейтрино
Hoff, J.R.
Cryogenic Lifetime Studies of 130 nm and 65 nm nMOS Transistors for High-Energy Physics Experiments / J.R.Hoff, [a.o.] // IEEE Transactions on Nuclear Science. – 2015. – Vol.62, No.3, Pt.3. – p.1255-61. – URL: http://dx.doi.org/10.1109/TNS.2015.2433793. – Bibliogr.:24.
Спец.(статьи,препринты) = С 344.1х - Методы регистрации нейтрино