Электронный каталог -Chen, C.-H. - Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips- Absopac

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Автор: Chen, C.-H.
IEEE Transactions on Nuclear Science: Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips
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Chen, C.-H.
Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips / C.-H.Chen, [et al.] // IEEE Transactions on Nuclear Science. – 2014. – Vol.61, No.5, Pt.2. – p.2694-2701. – URL: http://dx.doi.org/10.1109/TNS.2014.2342872. – Bibliogr.:31.

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Электронный каталог: Chen, C.-H. - Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips

Chen, C.-H. - Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips

Электронный каталог

Поиск :

Личный кабинет :

Электронный каталог: Chen, C.-H. - Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips

Chen, C.-H. - Characterization of Heavy-Ion-Induced Single-Event Effects in 65 nm Bulk CMOS ASIC Test Chips

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