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Электронный каталог: Tao, H. L. - Effects of Oxygen Vacancy on Magnetic Properties of Cobalt-Doped ZnO Dilute Magnetic Semiconductors
Tao, H. L. - Effects of Oxygen Vacancy on Magnetic Properties of Cobalt-Doped ZnO Dilute Magnetic Semiconductors
Статья
Автор: Tao, H. L.
International Journal of Modern Physics B: Effects of Oxygen Vacancy on Magnetic Properties of Cobalt-Doped ZnO Dilute Magnetic Semiconductors
б.г.
ISBN отсутствует
Автор: Tao, H. L.
International Journal of Modern Physics B: Effects of Oxygen Vacancy on Magnetic Properties of Cobalt-Doped ZnO Dilute Magnetic Semiconductors
б.г.
ISBN отсутствует
Статья
Tao, H.L.
Effects of Oxygen Vacancy on Magnetic Properties of Cobalt-Doped ZnO Dilute Magnetic Semiconductors / H.L.Tao, [a.o.] // International Journal of Modern Physics B : Condensed Matter Physics.Statistical Physics.Applied Physics. – 2013. – Vol.27, No.17. – p.1350078. – URL: http://dx.doi.org/10.1142/S0217979213500781. – Bibliogr.:27.
Спец.(статьи,препринты) = С 36 - Физика твердого тела$
Tao, H.L.
Effects of Oxygen Vacancy on Magnetic Properties of Cobalt-Doped ZnO Dilute Magnetic Semiconductors / H.L.Tao, [a.o.] // International Journal of Modern Physics B : Condensed Matter Physics.Statistical Physics.Applied Physics. – 2013. – Vol.27, No.17. – p.1350078. – URL: http://dx.doi.org/10.1142/S0217979213500781. – Bibliogr.:27.
Спец.(статьи,препринты) = С 36 - Физика твердого тела$