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Электронный каталог: Li, J. - Simulation of Diode Characteristics of Carbon Nanotube Field-Effect Transistors with Symmetric So...
Li, J. - Simulation of Diode Characteristics of Carbon Nanotube Field-Effect Transistors with Symmetric So...
Статья
Автор: Li, J.
EPL: A Letters Journal Exploring the Frontiers of Physics: Simulation of Diode Characteristics of Carbon Nanotube Field-Effect Transistors with Symmetric So...
б.г.
ISBN отсутствует
Автор: Li, J.
EPL: A Letters Journal Exploring the Frontiers of Physics: Simulation of Diode Characteristics of Carbon Nanotube Field-Effect Transistors with Symmetric So...
б.г.
ISBN отсутствует
Статья
Li, J.
Simulation of Diode Characteristics of Carbon Nanotube Field-Effect Transistors with Symmetric Source and Drain Contacts / J.Li, X.Zhang // EPL: A Letters Journal Exploring the Frontiers of Physics. – 2011. – Vol.95, No.6. – p.68007. – URL: http://dx.doi.org/10.1209/0295-5075/95/68007. – Bibliogr.:29.
Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры
Li, J.
Simulation of Diode Characteristics of Carbon Nanotube Field-Effect Transistors with Symmetric Source and Drain Contacts / J.Li, X.Zhang // EPL: A Letters Journal Exploring the Frontiers of Physics. – 2011. – Vol.95, No.6. – p.68007. – URL: http://dx.doi.org/10.1209/0295-5075/95/68007. – Bibliogr.:29.
Спец.(статьи,препринты) = С 325.7 - Фуллерены (Сn). Атомные кластеры