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Электронный каталог: Ogawa, Y. - Nanometer-Scale Mapping of the Strain and Ge Content of Ge/Si Quantum Dots Using Enhanced Raman S...
Ogawa, Y. - Nanometer-Scale Mapping of the Strain and Ge Content of Ge/Si Quantum Dots Using Enhanced Raman S...
Статья
Автор: Ogawa, Y.
Physical Review B: Nanometer-Scale Mapping of the Strain and Ge Content of Ge/Si Quantum Dots Using Enhanced Raman S...
б.г.
ISBN отсутствует
Автор: Ogawa, Y.
Physical Review B: Nanometer-Scale Mapping of the Strain and Ge Content of Ge/Si Quantum Dots Using Enhanced Raman S...
б.г.
ISBN отсутствует
Статья
Ogawa, Y.
Nanometer-Scale Mapping of the Strain and Ge Content of Ge/Si Quantum Dots Using Enhanced Raman Scattering by the Tip of an Atomic Force Microscope / Y.Ogawa, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2011. – Vol.83, No.8. – p.081302(R). – URL: http://dx.doi.org/10.1103/PhysRevB.83.081302. – Bibliogr.:26.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$
Ogawa, Y.
Nanometer-Scale Mapping of the Strain and Ge Content of Ge/Si Quantum Dots Using Enhanced Raman Scattering by the Tip of an Atomic Force Microscope / Y.Ogawa, [a.o.] // Physical Review B : Condensed Matter and Materials Physics. – 2011. – Vol.83, No.8. – p.081302(R). – URL: http://dx.doi.org/10.1103/PhysRevB.83.081302. – Bibliogr.:26.
Спец.(статьи,препринты) = С 33 а - Нанофизика. Нанотехнология$